IPP05CN10L G

IPP05CN10L G OptiMOS®2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP05CN10L G Package PG-TO220-3 Marking 05CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 100 T C=100 °C 100 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 826 Reverse diode dv /dt dv /dt I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 Gate source voltage 4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.02 Unit A mJ kV/µs ±20 V 300 W -55 ... 175 °C 55/175/56 page 1 2008-10-31 IPP05CN10L G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area5) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1.2 1.85 2.4 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 4.8 6.4 mΩ V GS=10 V, I D=100 A - 4.2 5.1 - 1.8 - Ω 106 212 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=100 A J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max g fs=f(I D); T j=25 °C 300 240 250 200 200 160 g fs [S] I D [A] parameter: T j 150 100 80 175 °C 25 °C 50 40 0 0 0 2 4 6 0 50 100 I D [A] V GS [V] Rev. 1.02 120 page 5 2008-10-31 IPP05CN10L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 12 3 10 2.5 8 2 V GS(th) [V] R DS(on) [mΩ] parameter: I D 98 % 6 typ 250 µA 1.5 4 1 2 0.5 0 2500 µA 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 104 25 °C 102 I F [A] C [pF] Coss 103 25 °C, 98% 175 °C 101 Crss 102 175 °C, 98% 101 100 0 20 40 60 80 V DS [V] Rev. 1.02 0 0.5 1 1.5 2 V SD [V] page 6 2008-10-31 IPP05CN10L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 10 8 20 V 100 50 V 6 V GS [V] I AS [A] 25 °C 100 °C 150 °C 80 V 4 10 2 1 0 1 10 100 1000 0 50 100 150 200 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 120 V GS Qg V BR(DSS) [V] 110 V g s(th) 100 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.02 page 7 2008-10-31 IPP05CN10L G PG-TO220-3: Outline Rev. 1.02 page 8 2008-10-31 IPP05CN10L G Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 9 2008-10-31